s.m.i-donau.ckoi ^pioaueti, line. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212) 227-6005 vp0808b/l/m, VP1008B/l/m p-channel enhancement-mode mosfet transistors product summary part number vp0808b vp0808l vp0808m VP1008B vp1008l vp1008m v(br)dss min (v) -80 -100 "?ds(on) ma? (&) 5@ vgs = -lo v 5@ vgs = -10 v 5@vgs = -lov 5@ vgs = -10 v 5@ vos = -10 v 5@ vgs = -lo v vgs(th) (v) -2 to -4.5 ~2 to -4.5 -2 to -4.5 -2 to -4.5 -2 to -4.5 -2 to -4.5 id (a) -0.88 -0.28 -0.31 -0.79 -0.28 -0.31 features high-side switching low cm-resistance: 2.5 q moderate threshold: -3.4 v fast switching speed: 40 ns low input capacitance: 75 pf benefits ? ease in driving switches ? low offset (error) voltage ? low-voltage operation ? high-speed switching ? easily driven without buffer applications drivers: relays, solenoids, lamps, hammers, displays, memories, transistors, etc. battery operated systems power supply, converter circuits motor control to-205ad (to-39) (case drain) vp0808b VP1008B to-226aa (to-92) vp0808l vp1008l to-237 (tab drain) vp0808m vp1008m top view top view top view absolute maximum ratings (ta = 25 c unless otherwise noted) parameter drain-source voltage gate-source voltage continuous drain current (tj= 150c) ta=25c ta= 100 c pulsed drain current8 power dissipation ta=25cc ta= 100c maximum junction-to-ambient maximum junction-to-case operating junction and storage temperature range symbol vds vgs id 'dm pd rthja rthjc tj> tstg vp0808bb -80 20 -0.88 -0.53 -3 6.25 2.5 20 vp0808l -80 30 -0.28 -0.17 -3 0.8 0.32 156 vp0808m -80 30 -0.31 -0.20 -3 1 0.4 125 VP1008Bb 100 20 -0.79 -0.53 -3 6.25 2.5 20 vp1008l -100 30 -0.28 -0.17 -3 0.8 0.32 156 vp1008m -100 30 -0.31 -0.20 -3 1 0.4 125 -55 to 150 unit v a w "c/w c notes a. pulse width limited by maximum junction temperature. b. reference case for all temperature testing. quality semi-conductors
vp0808b/l/m, VP1008B/l/m specifications2 parameter symbol test conditions typb limits vp0808b/l/m min max VP1008B/l/m min max unit static drain-source breakdown voltage gate-threshold voltage zero gate voltage drain current on-state drain current0 drain-source on-resistancec forward transcoiiductancec common source output conductancec v(br)dss vos(lh) less loss 'd(on) rds(on) efc gos vos = 0 v, ld = -10|ta vds = vgs. id = -' ma vds = 0 v, vgs = 20 v tj = 125c vds = --80v,vgs = ov tj= 125c vds = -100v, vgs = 0 v tj=125c vds = -15 v,vqs = -10 v vgs = -'0 v, id = -i a tj= 125c vds = -10 v, 1d = -0.5 a vds = -7-5 v, id = -o. 1 a -110 -3.4 -2 2.5 4.4 325 0.45 -80 -2 -1.1 200 ^.5 100 500 -10 500 5 8 -100 -2 -1.1 200 -a.5 100 500 -10 -500 5 8 v na ha a q ms dynamic input capacitance output capacitance reverse transfer capacitance ciss cgss crss vds ? 25 v, vgs - 0 v f = 1 mhz 75 40 18 150 60 25 150 60 25 pf switching*1 turn-on time turn-off time td(on) tr td(off) tf vdd = -25 v, rl = 47 q in ~ -0 5 a vrfn - 10 v rg = 25 q 11 30 20 20 15 40 30 30 15 40 30 30 ns notes a. ta ^ 25 c unless otherwise noted. b. for design aid only, not subject to production testing. c. pulse test: pw < 300 us duty cycle < 2%. d. switching time is essentially independent of operating temperature.
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